e l ek tr on isch e b a u e lemen te SMG1332E 600ma, 20 v ,r ds(on) 600m n-channel enhancement mode power mos.fet [ description features the SMG1332E provide the designer with best combination of fast swirching, low on-resistance and cost-effectiveness. total power dissipation linear derating factor operating junction and storage temperature range absolute maximum ratings max. drain-source voltage g ate-source voltage continuous drain current ma a ma 20 5 600 470 2.5 1.0 3 1,2 continuous drain current pulsed drain current parameter symbo l ratings unit thermal data parameter symbo l ratings unit thermal resistance junction-ambient 3 v v i d @t a =7 0 /w c w / c c w v ds v gs i d @t a =25 i dm p d @t a =25 tj, tstg rthj-a 0.0 08 -55~+150 125 3 o o o c o c o c o dim min max a 2.70 3.10 b 1. 4 0 1. 6 0 c 1.00 1.30 d 0.35 0.50 g 1.70 2. 1 0 h 0.00 0.10 j 0.10 0.26 k 0. 2 0 0. 6 0 l 0.85 1. 1 5 s 2. 40 2.8 0 all dimension in mm sc-59 http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain 01 -jan-2006 rev. b page 1 of 4 * simple gate drive * 2kv esd rating (per mil-std-883d) * s m a l l p a c k a g e o u t l i n e d g s rohs compliant product
e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 c u n l e s s o t h e r w i s e s p e c i f i e d ) t o t a l g a t e c h a r g e r d s ( o n ) u a u a u a n c n s p f [ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 6 0 _ _ _ _ 0 1 0 1 1 0 6 0 0 1 . 3 0 . 3 0 . 5 4 1 0 1 5 2 3 8 1 7 1 2 2 v g s = 0 v v d s = 1 0 v f = 1 . 0 m h z v d d = 1 0 v i d = 6 0 0 m a v g s = 1 0 v r g = 3 . 3 r d = 1 6 . 7 [ [ i d = 6 0 0 m a v d s = 1 6 v v g s = 4 . 5 v v g s = 4 . 5 v , i d = 6 0 0 m a v g s = 5 v v d s = 2 v , v g s = 0 v d s = 1 6 v , v g s = 0 g a t e - s o u r c e l e a k a g e c u r r e n t d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) s t a t i c d r a i n - so u r c e o n - r e s i s t a n c e d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 7 0 ) g a t e - s o u r c e c h a r g e g a t e - d r a i n ( " m i l l e r " ) c h a r g e t u r n - o n d e l a y t i m e r i s e t i m e t u r n - o f f d e l a y t i m e f a l l t i m e i n p u t c a p a c i t a n c e o u t p u t c a p a c i t a n c e r e v e r s e t r a n s f e r c a p a c i t a n c e i g s s i d s s c r s s q g q g s q g d t d ( o n ) t d ( o f f ) t r c i s s c o s s t f f o r w a r d t r a n s c o n d u c t a n c e g f s s _ _ c o c o 2 2 1 v d s = 5 v , i d = 6 0 0 m a _ _ 1 2 0 0 v g s = 2 . 5 v , i d = 4 0 0 m a v v / v v g s = 0 v , i d = 2 5 0 u a v d s = v g s , i d = 2 5 0 u a r e f e r e n c e t o 2 5 , i d = 1 m _ _ _ _ _ c o 2 0 0 . 0 2 0 . 5 1 . 2 c o p a r a m e t e r s y m b o l m a x . t y p . t e s t c o n d i t i o n m i n . u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e b r e a k d o w n v o l t a g e t e m p . c o e f f i c i e n t g a t e t h res h o l d vo l t a g e b v d s s b v d s / t j v g s ( t h ) a o 0 1 - j an-2006 rev. b p a g e 2 o f 4 h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l so u r c e-dr ai n di o d e par am et er sy m b o l max . ty p . tes t co n d i t i o n mi n . un i t forward on voltage v ds _ _ i s = 3 0 0 m a , v g s = 0 v . v 1.2 n o t e s : 1 . p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . ?? ?? 2 3 . s u r f a c e m o u n t e d o n fr4 board, t 10sec. e l ek tr on isch e b a u e lemen te smg 1332e 6 0 0m a, 20 v ,r ds(on) 600m n-channel enhancement mode power mos.fet [ ??
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-j an-2006 rev. b page 3 of 4 c h a r a c t e r i s t i c s c u r v e e l ek tr on isch e b a u e lemen te smg 1332e 6 0 0m a, 20 v ,r ds(on) 600m n-channel enhancement mode power mos.fet [ f i g 1. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 2. t yp i c al o u t p u t c h ar ac t e r i s t i c s f i g 3. o n - r e s i s t an c e v . s . g a t e v ol t age f i g 4. n or m a l i z e d o n - r e s i s t an c e v . s . ju n c t i o n t e m p e r at u r e f i g 6. g a t e t h r e s h o l d v o l t age v . s . ju n c t i on t e m p e r at u r e f i g 5. f or w a r d c h ar a c t e r i s t i c s of r e ve r s e d i od e
http://www.secosgmbh.com/ any changing of specification will not be informed individual 01-j an-2006 rev. b page 4 of 4 e l ek tr on isch e b a u e lemen te smg 1332e 6 0 0m a, 20 v ,r ds(on) 600m n-channel enhancement mode power mos.fet [ f i g 9. m ax i m u m s af e o p e r at i n g a r e a f i g 10. e f f e c t i ve t r an s i e n t t h e r m a l i m p e d an c e f i g 7. g a t e c h ar ge c h ar ac t e r i s t i c s f i g 8. t yp i c al c ap ac i t an c e c h ar ac t e r i s t i c s f i g 1 1. s w i t c h i n g t i m e w ave f o r m f i g 12. g a t e c h ar ge w ave f o r m
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